Modular electrochemical processing system

ABSTRACT

Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes two primary components. The first component is an interface section having at least one first substrate transfer robot positioned therein, and the second component is at least one processing module in communication with the interface section, the at least one processing module having a pretreatment and post treatment cell, a processing cell, at a second substrate transfer robot positioned therein. The substrate processing method generally includes transporting a dry substrate to a processing module via a dry interface. Once the substrate is positioned in the processing module, a robot transfers the substrate between a treatment cell and a processing cell contained within the processing module to complete a predetermined sequence of processing steps. Once the processing steps are completed, the treatment cell generally dries the substrate and then the substrate is transferred back to the dry interface.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation of co-pending U.S. patentapplication Ser. No. 10/274,721, filed Oct. 18, 2002. The aforementionedrelated patent application is herein incorporated by reference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] Embodiments of the invention generally relate to a modular dry indry out electrochemical processing system.

[0004] 2. Description of the Related Art

[0005] Metallization of sub-quarter micron sized features is afoundational technology for present and future generations of integratedcircuit manufacturing processes. More particularly, in devices such asultra large scale integration-type devices, i.e., devices havingintegrated circuits with more than a million logic gates, the multilevelinterconnects that lie at the heart of these devices are generallyformed by filling high aspect ratio, i.e., greater than about 4:1,interconnect features with a conductive material, such as copper oraluminum. Conventionally, deposition techniques such as chemical vapordeposition (CVD) and physical vapor deposition (PVD) have been used tofill these interconnect features. However, as the interconnect sizesdecrease and aspect ratios increase, void-free interconnect feature fillvia conventional metallization techniques becomes increasinglydifficult. Therefore, plating techniques, i.e., electrochemical plating(ECP) and electroless plating, have emerged as promising processes forvoid free filling of sub-quarter micron sized high aspect ratiointerconnect features in integrated circuit manufacturing processes.

[0006] In an ECP process, for example, sub-quarter micron sized highaspect ratio features formed into the surface of a substrate (or a layerdeposited thereon) may be efficiently filled with a conductive material,such as copper. ECP plating processes are generally multistageprocesses, wherein a substrate is prepared for plating, i.e., one ormore preplating processes, brought to a plating cell for a platingprocess, and then the substrate is generally post treated after theplating process. The preplating process generally includes processessuch as depositing a barrier/diffusion layer and/or a seed layer on thesubstrate, precleaning the seed layer and/or substrate surface prior tocommencing plating operations, and other preplating operations that aregenerally known in the art. Once the preplating processes are complete,the substrate is generally transferred to a plating cell where thesubstrate is contacted with a plating solution and the desired platinglayer is deposited on the substrate. Once the plating processes arecomplete, then the substrate is generally transferred to a posttreatment cell, such as a rinse cell, bevel clean cell, drying cell, orother post treatment process cell generally used in the semiconductorart.

[0007] However, one challenge associated with conventional platingsystems is that the preplating operations, plating operations, and postplating operations are all generally conducted in separate cells. Assuch, a substantial amount of time is expended transferring substratesbetween the respective processing cells. This time required to transfersubstrates between the respective processing cells or stations has adetrimental impact upon the system throughput. Furthermore, sinceseveral of the processes involved in electrochemical plating are wetprocesses, the transfer of substrates between processing cellsinherently results in dripping, which may contribute to contaminationand cell cleaning problems. Therefore, there is a need for anelectrochemical plating system configured to minimize the transfer timebetween substrate pretreatment processes, plating processes, and postplating processes, as well as minimizing or eliminating thecontamination and cleaning challenges created by wet substrate transferprocesses.

SUMMARY OF THE INVENTION

[0008] Embodiments of the invention may provide a substrate processingsystem, wherein the substrate processing system includes 2 primarycomponents. The first component is an interface section having at leastone first substrate transfer robot positioned therein, and the secondcomponent is at least one processing module in communication with theinterface section, the at least one processing module having apretreatment and post treatment cell, a processing cell, and a secondsubstrate transfer robot positioned therein.

[0009] Embodiments of the invention may further provide a substrateprocessing system, wherein the processing system includes an interfacesection having at least one first substrate transfer robot positionedtherein, and at least one processing module in communication with theinterface section, the at least one processing module having apretreatment and post treatment cell, a processing cell, and a secondsubstrate transfer robot positioned therein.

[0010] Embodiments of the invention may further provide anelectrochemical processing system. The processing system may include afactory interface having a substrate transfer robot positioned therein,the factory interface being configured to communicate with at least onesubstrate containing cassette, and at least one substrate processingmodule in detachable communication with the factory interface, each ofthe at least one substrate processing modules including apretreatment/post treatment cell and an electrochemical processing cell.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] So that the manner in which the above recited features of thepresent invention can be understood in detail, a more particulardescription of the invention, briefly summarized above, may be had byreference to embodiments, some of which are illustrated in the appendeddrawings. It is to be noted, however, that the appended drawingsillustrate only typical embodiments of this invention and are thereforenot to be considered limiting of its scope, for the invention may admitto other equally effective embodiments.

[0012]FIG. 1 illustrates a plan view of an exemplary processing systemof the invention.

[0013]FIG. 2 illustrates a plan view of an exemplary processing moduleof the invention.

[0014]FIG. 3 illustrates a perspective and partial sectional view of anexemplary pretreatment/post treatment cell of the invention.

[0015]FIG. 4 illustrates a perspective and partial sectional view anexemplary plating cell of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0016] Embodiments of the invention generally provide a modular dry indry out type processing system. More particularly, embodiments of theinvention generally provide a plurality of substrate processing modulesthat are interconnected by an interface section. Each of the processingmodules are generally configured to receive substrates from theinterface section for processing. The interface section, which is oftentermed a factory interface (FI) in the semiconductor art, generallyincludes at least one substrate transfer robot configured to transportsubstrates from a source, i.e., a substrate cassette positioned incommunication with the FI, to one or more of the processing modules, andthen back to one of the sources. Each of the processing modulesgenerally includes at least two individual processing stations or cells,along with a wet transfer robot positioned within the processing module.For example, each of the processing modules may include a firstprocessing cell or station configured to conduct pre and post platingprocesses, along with a second processing cell or station configured toconduct plating processes. The processing module robot is generallyconfigured to transfer substrates between the respective cells withinthe module. Additionally, although not illustrated in the figures, theprocessing module robot may also be configured to access a substratehandoff point, i.e., a pad may be positioned between the FI robot andthe processing module robot so that the FI robot may drop off asubstrate for pickup by the processing module robot, and vice versa.Additionally, each of the respective processing modules may have ahandoff location that may be used for the robot positioned in theprocessing module to place a processed substrate on so that the robot inthe adjacent interface may then pick up the substrate from the handofflocation, which may eliminate problems associated with transferring asubstrate from a wet processing blade to a dry processing blade.Therefore, in this configuration, dry substrates may be supplied to therespective processing modules by the FI substrate transfer robot forprocessing. The dry substrates may be pretreated, plated, and posttreated within the processing module, and then the dry substrate mayonce again be removed from the module by the substrate transfer robot inthe FI.

[0017]FIG. 1 illustrates a plan view of an exemplary processing system100 of the invention. Processing system 100, which may be anelectrochemical plating system, for example, generally includes an FI101 and a plurality of processing modules 102. FI 101 is configured tocommunicate with one or more substrate containing cassettes 103, andmore particularly, to remove substrates from the cassettes 103 forprocessing in system 100, and then when the processing steps arecompleted, FI 101 is configured to return the processed substrates toone or more of the cassettes 103. In order to accomplish the substratetransfer processes associated with removing/replacing substrates incassettes 103, FI 101 includes at least one substrate transfer robot104. Robot 104 may include one or more linear track-type robots, asillustrated in FIG. 1, however, the present invention is not limited tothis configuration, and therefore, various robots known in thesemiconductor art may be implemented without departing from the scope ofthe invention. Each of the respective processing modules 102 is incommunication with the FI 101, and therefore, each of processing modules102 may receive and transmit substrates to/from the FI 101. Moreparticularly, each of the respective processing modules 102 may receivesubstrates from FI 101 for processing and return substrates that havebeen processed in module 102 to the FI 101 for return to cassettes 103.

[0018] Although embodiments of the invention are generally directed to aplurality of processing modules interconnected by a factory interface,the invention is not intended to be limited to this configuration. Forexample, conventional semiconductor processing systems have implementeda FI in conjunction with a substrate transfer chamber or enclosure,wherein the substrate transfer chamber is in communication with aplurality of processing stations. Some embodiments of the invention havecombined the FI and the substrate transfer chamber, and therefore, haveeliminated a substrate transfer step (transfer of the substrate betweenthe FI and the substrate transfer chamber). Furthermore, although theillustration of an embodiment of the invention in FIG. 1 depicts 4processing modules 102 in communication with FI 101, the invention isnot limited to any particular number of processing modules 102 that maybe placed in communication with the FI. Further, although notillustrated in FIG. 1, FI 101 may include or be in communication withadditional chambers, such as an annealing chamber, a metrology chamber,or other chamber/cell that may be useful in a semiconductor processingsystem.

[0019]FIG. 2 illustrates a plan view of an exemplary processing module102 of the invention. In one embodiment of the invention, processingmodule 102 may include a processing module transfer robot 203, asubstrate pretreatment/post treatment cell 201, and a substrateprocessing cell 202. The processing module substrate transfer robot 203is generally configured to transport one or more substrates between thepretreatment cell 201, the processing cell 202, and the FI robot 104 inany order, i.e., robot 203 may access any of the three components(generally only the pretreatment cell 201 and processing cell 202,however it may access the FI robot 104 or the optional handoff pad orstation) in any order without-limit. Additionally, a valve or movablepartition may be positioned between FI 101 and processing module 102.Therefore, in this configuration, processing module 102 may receive adry substrate from FI robot 104 for processing. The dry substrate mayfirst be received at the pretreatment cell 201, where any pre-processingsteps may be conducted on the substrate. Exemplary preprocessing stepsmay include rinsing, cleaning, or otherwise treating the surface of asubstrate with a fluid or gas. Once the preprocessing steps arecompleted in cell 201, the substrate may be removed from pretreatmentcell 201 and transported via robot 203 to processing cell 202, whereprocessing steps are conducted on the substrate. Exemplary processesthat may be conducted in processing cell 201 include, but are notlimited to, electrochemical deposition, electroless deposition,electrochemical deplating, and other wet processing-type semiconductorfabrication processes. Once the processing steps are completed in cell202, robot 203 once again may transport the substrate to treatment cell201, where post treatment processes may be conducted on the substrate.Exemplary post treatment steps include cleaning, edge bead removal,rinsing, drying, and other processes known to be conducted onsemiconductor substrates after a wet processing step. Once the posttreatment processes are completed, the substrate may be removed fromprocessing module 102 by FI robot 104.

[0020]FIG. 3 illustrates a perspective and partial sectional view of anexemplary pretreatment/post treatment cell 201 of the invention. Thepretreatment/post treatment cell 201 may generally include a cellconfigured to rinse or otherwise treat a substrate with a processingfluid before or subsequent to a substrate processing step conducted inthe adjacent processing cell 202. The exemplary cell 201 includes aprocessing basin 301 that has a substrate support member 302 positionedin a bottom portion thereof. The substrate support member 302, asillustrated in FIG. 3, is generally configured to support a substrate ina face up configuration, in a configuration wherein the working orproduction surface of the substrate is facing upward or away from thesupport member 302. Further, substrate support member 302 is configuredto secure a substrate thereto and rotate. Cell 201 further includes apivotally mounted fluid dispensing arm 303 configured to selectivelydispense a processing fluid onto the production surface of a substratepositioned on the substrate support member. For example, in a rinsingprocess, pivotal arm 303 may be pivoted to the center of the substrateand a rinsing solution, such as DI, for example, may be dispensed from afluid dispensing nozzle positioned at a distal end of arm 303. Thesubstrate support member 302 may be rotated and the arm may then bepivoted radially outward, which generally operates to rinse thesubstrate from the center outward. Alternatively, if an edge beadremoval process is to be conducted in cell 201, then the substrate maybe secured to the substrate support member 302 and rotated, while arm303 is positioned to precisely dispense an etchant onto a perimeterportion of the rotating substrate. The etchant may then operate toremove material from the edge and bevel of the substrate. It is to benoted, however, that embodiments of the invention are not limited to anyparticular substrate processing configurations. For example, although aface up processing configuration is illustrated, embodiments of theinvention are not intended to be limited to this configuration, asembodiments of the present invention contemplate that both face up orface down-type configurations may be implemented without departing fromthe scope of the invention.

[0021] The pretreatment/post treatment cell 201 may further beconfigured to dry one or more substrates, through, for example, a spinrinse dry process, as is generally known in the semiconductor art. Assuch, exemplary processes that may be conducted by the pretreatment/posttreatment cell include, but are not limited to, prerinsing substrates,pretreating substrates before plating, removing contaminant layers fromsubstrates, spin rinse drying substrates, conducting edge bead removalprocesses on substrates, and other processes that are known in thesemiconductor art. In embodiments of the invention wherein system 100 isan electrochemical plating cell, pretreatment/post treatment cell maygenerally be configured to prerinse or pretreat a substrate to be platedwith a rinsing or pretreatment solution prior to the substrate beingtransferred to the adjacent processing cell, which would be configuredas an electrochemical plating cell. Exemplary pretreatment processes forelectrochemical plating systems may include prerinsing with deionizedwater (DI), pretreating the substrate surface with a fluid configured toform or remove an oxide layer on the substrate surface, pretreating thesurface of the substrate with a fluid configured to enhance some portionof a subsequent plating process, or other pretreatment process known inthe semiconductor art. Further, the pretreatment/post treatment cell maybe configured to receive substrates from the adjacent plating cell forprocessing after the plating process is complete. Exemplary posttreatment processes include rinsing the substrate to remove residualplating solution from the substrate surface, conducting an edge beadremoval or bevel clean process, and/or spin rinse drying the substrate.

[0022]FIG. 4 illustrates a perspective and partial sectional view of anexemplary electrochemical plating cell 400 of the invention. Platingcell 400 generally includes an outer basin 401 and an inner basin 402positioned within outer basin 401. Inner basin 402 is generallyconfigured to contain a plating solution that is used to plate a metal,e.g., copper, onto a substrate during an electrochemical platingprocess. During the plating process, the plating solution is generallycontinuously supplied to inner basin 402 (at about 1-5 gallons perminute for a 10 liter plating cell, for example), and therefore, theplating solution continually overflows the uppermost point of innerbasin 402 and runs into outer basin 401. The overflow plating solutionis then collected by outer basin 401 and drained therefrom forrecirculation into basin 402. As illustrated in FIG. 4, plating cell 400is generally positioned at a tilt angle, i.e., the frame portion 403 ofplating cell 400 is generally elevated on one side such that thecomponents of plating cell 400 are tilted between about 3° and about30°. Therefore, in order to contain an adequate depth of platingsolution within inner basin 402 during plating operations, the uppermostportion of basin 102 may be extended upward on one side of plating dell400, such that the uppermost point of inner basin 402 is generallyhorizontal and allows for contiguous overflow of the plating solutionsupplied thereto around the perimeter of basin 402.

[0023] The frame member 403 of plating cell 400 generally includes anannular anode base member 404 secured to frame member 403. Since framemember 403 is elevated on one side, the upper surface of base member 404is generally tilted from the horizontal at an angle that corresponds tothe angle of frame member 403 relative to a horizontal position. Basemember 404 includes an annular or disk shaped recess formed therein, theannular recess being configured to receive a disk shaped anode member405. Base member 404 further includes a plurality of fluid inlets/drains409 positioned on a lower surface thereof. Each of the fluidinlets/drains 409 are generally configured to individually supply ordrain a fluid to or from either the anode compartment or the cathodecompartment of plating cell 400. Anode member 405 generally includes aplurality of slots 407 formed therethrough, wherein the slots 407 aregenerally positioned in parallel orientation with each other across thesurface of the anode 405. The parallel orientation allows for densefluids generated at the anode surface to flow downwardly across theanode surface and into one of the slots 407. Plating cell 400 furtherincludes a membrane support assembly 406. Membrane support assembly 406is generally secured at an outer periphery thereof to base member 404,and includes an interior region 408 configured to allow fluids to passtherethrough via a sequence of oppositely positioned slots and bores.The membrane support assembly may include an o-ring type seal positionednear a perimeter of the membrane, wherein the seal is configured toprevent fluids from traveling from one side of the membrane secured onthe membrane support 406 to the other side of the membrane.

[0024] In operation, the plating cell 400 of the invention provides asmall volume (electrolyte volume) processing cell that may be used forcopper electrochemical plating processes, for example. Plating cell 400may be horizontally positioned or positioned in a tilted orientation,i.e., where one side of the cell is elevated vertically higher than theopposing side of the cell. If plating cell 400 is implemented in atilted configuration, then a tilted head assembly and substrate supportmember may be utilized to immerse the substrate at a constant immersionangle, i.e., immerse the substrate such that the angle between thesubstrate and the upper surface of the electrolyte does not changeduring the immersion process. Further, the immersion process may includea varying immersion velocity, i.e., an increasing velocity as thesubstrate becomes immersed in the electrolyte solution. The combinationof the constant immersion angle and the varying immersion velocityoperates to eliminate air bubbles on the substrate surface.

[0025] Assuming a tilted implementation is utilized, a substrate isfirst immersed into a plating solution contained within inner basin 402.Once the substrate is immersed in the plating solution, which generallycontains copper sulfate, chlorine, and one or more of a plurality oforganic plating additives (levelers, suppressors, accelerators, etc.)configured to control plating parameters, an electrical plating bias isapplied between a seed layer on the substrate and the anode 405positioned in a lower portion of plating cell 400. The electricalplating bias generally operates to cause metal ions in the platingsolution to deposit on the cathodic substrate surface. The platingsolution supplied to inner basin 402 is continually circulated throughinner basin 402 via fluid inlet/outlets 409. More particularly, theplating solution may be introduced in plating cell 400 via a fluid inlet409. The solution may travel across the lower surface of base member 404and upward through one of fluid apertures 406. The plating solution maythen be introduced into the cathode chamber via a channel formed intoplating cell 400 that communicates with the cathode chamber at a pointabove membrane support 406. Similarly, the plating solution may beremoved from the cathode chamber via a fluid drain positioned abovemembrane support 106, where the fluid drain is in fluid communicationwith one of fluid drains 109 positioned on the lower surface of basemember 404. For example, base member 404 may include first and secondfluid apertures positioned on opposite sides of base member 404. Theoppositely positioned fluid apertures may operate to individuallyintroduce and drain the plating solution from the cathode chamber in apredetermined direction, which also allows for flow direction control.The flow control direction provides control over removal of light fluidsat the lower membrane surface, removal of bubbles from the anodechamber, and assists in the removal of dense or heavy fluids from theanode surface via the channels 402 formed into base 404.

[0026] Once the plating solution is introduced into the cathode chamber,the plating solution travels upward through diffusion plate 410.Diffusion plate 410, which is generally a ceramic or other porous diskshaped member, generally operates as a fluid flow restrictor to even outthe flow pattern across the surface of the substrate. Further, thediffusion plate 410 operates to resistively damp electrical variationsin the electrochemically active area the anode or cation membranesurface, which is known to reduce plating uniformities. Additionally,embodiments of the invention contemplate that the ceramic diffusionplate 410 may be replaced by a hydrophilic plastic member, i.e., atreated PE member, an PVDF member, a PP member, or other material thatis known to be porous and provide the electrically resistive dampingcharacteristics provided by ceramics. However, the plating solutionintroduced into the cathode chamber, which is generally a platingcatholyte solution, i.e., a plating solution with additives, is notpermitted to travel downward through the membrane (not shown) positionedon the lower surface of membrane support assembly 406 into the anodechamber, as the anode chamber is fluidly isolated from the cathodechamber by the membrane. The anode chamber includes separate individualfluid supply and drain sources configured to supply an anolyte solutionto the anode chamber. The solution supplied to the anode chamber, whichmay generally be copper sulfate in a copper electrochemical platingsystem, circulates exclusively through the anode chamber and does notdiffuse or otherwise travel into the cathode chamber, as the membranepositioned on membrane support assembly 406 is not fluid permeable ineither direction.

[0027] Additionally, the flow of the fluid solution (anolyte, i.e., aplating solution without additives, which may be referred to as a virginsolution) into the anode chamber is directionally controlled in order tomaximize plating parameters. For example, anolyte may be communicated tothe anode chamber via an individual fluid inlet 409. Fluid inlet 409 isin fluid communication with a fluid channel formed into a lower portionof base member 404 and the fluid channel communicates the anolyte toapertures configured to circulate the respective fluids to therespective chambers above and below the membrane. Similarly, a catholytesolution, i.e., a solution with plating additives therein, may beseparately communicated to the cathode compartment, i.e., the volumeabove the membrane.

[0028] Therefore, in operation, system 100 may be used to provide asubstrate to a processing module 102 in a dry form, i.e., the surface ofthe substrate is not wet from a previous wet processing step. Forexample, substrates having a seed layer deposited thereon may beintroduced into system 100 via cassettes 103. Robot 104 may operate todeliver the substrate having a seed layer formed thereon (a drysubstrate) to processing module 102. Module 102 generally receives thesubstrate in the preprocessing cell 201, where the substrate may berinsed and/or cleaned in accordance with a specific processing recipe.Once the desired preprocessing steps are completed in cell 201, thesubstrate is generally transferred to the processing cell 202 via robot203. In the processing cell the substrate may be plated, deplated, orotherwise processed. Once the substrate is processed in cell 202, it isgenerally transferred back to cell 201 for post processing steps.Exemplary post processing steps include rinsing, cleaning, edge beadremoval, drying, and/or other known semiconductor post processing steps.However, one step generally conducted in cell 201 is a spin rinse dryprocess, as system 100 is generally configured to supply a dry substrateto processing module 102 and receive a dry processed substrate fromprocessing module when the processing steps are complete. As such, FI101 is generally maintained in a clean and dry manner and is not likelyto contaminate other substrates traveling therethrough for processing inother processing modules 102.

[0029] Another advantage provided by system 100 is that processingmodules 102 are removable, and more particularly, processing modules areinterchangeable. Therefore, system 100 has the ability to shut down anindividual processing module 102 when a fault occurs, service or removethe faulty processing module 102 from FI 101, and/or replace it with anew processing module 102, without interrupting the operation of system100. Additionally the removability of modules 102 allows system 100 tobe scalable, as additional processing modules may be added to theinterface section as needed. For example, embodiments of the inventioncontemplate that annealing chambers or modules, electroless chambers ormodules, polishing modules or chambers, other electrolytic processingmodules, and/or chemical polishing modules.

[0030] While the foregoing is directed to embodiments of the presentinvention, other and further embodiments of the invention may be devisedwithout departing from the basic scope thereof, and the scope thereof isdetermined by the claims that follow

1. An electroless processing system, comprising: an interface sectionhaving a substrate transfer robot positioned thereon; and an electrolessprocessing module positioned in communication with the interfacesection, the electroless processing module comprising: a processingenclosure; an electroless activation cell positioned in the enclosure;an electroless deposition cell positioned in the enclosure; and anenclosure robot configured to transfer substrates between the activationcell and the deposition cell.
 2. The electroless processing system ofclaim 1, wherein the electroless activation cell and the electrolessdeposition cell comprise face up processing cells.
 3. The electrolessprocessing system of claim 2, wherein the activation cell and thedeposition cell each comprise: a rotatable substrate support memberconfigured to support a substrate in a configuration such that aproduction surface of the substrate is facing away from the substratesupport member; a fluid dispensing arm movably positioned to dispense aprocessing fluid onto the production surface of the substrate.
 4. Theelectroless processing system of claim 3, further comprising means forcentering the substrate on the substrate support member.
 5. Theelectroless processing system of claim 1, further comprising at leastone substrate cleaning cell positioned in communication with theinterface section.
 6. The electroless processing system of claim 5,wherein the at least one substrate cleaning cell comprises at least oneof a spin rinse dry cell and a substrate bevel clean cell.
 7. Theelectroless processing system of claim 1, wherein the electrolessactivation cell is configured to selectively dispense at least one of asubstrate precleaning solution and an electroless activation solutiononto the substrate.
 8. The electroless processing system of claim 1,wherein the electroless deposition cell is configured to selectivelydispense at least one of an electroless deposition solution and asubstrate post deposition cleaning solution onto the substrate.
 9. Theelectroless processing system of claim 1, wherein the electrolessprocessing module is removable from the interface section.
 10. Theelectroless processing system of claim 1, further comprising aselectively actuatable access valve positioned in the enclosure to allowfor access into a processing volume of enclosure by the substratetransfer robot.
 11. An electroless processing system, comprising: aprocessing enclosure positioned in communication with a processingplatform; a substrate transfer robot positioned in the enclosure; afirst fluid processing cell positioned in the enclosure, the first fluidprocessing cell being configured to dispense at least one of anelectroless precleaning solution and an electroless activation solutiononto the substrate; and a second fluid processing cell positioned in theenclosure, the second fluid processing cell being configured to dispenseat least one of an electroless deposition solution and an electrolesspost cleaning solution onto the substrate.
 12. The electrolessprocessing system of claim 11, wherein the first and second fluidprocessing cells comprises: a rotatable substrate support member; afluid dispensing arm movably positioned to dispense processing fluidsonto the substrate; and a substrate centering member positioned radiallyoutward of the support member.
 13. The electroless processing system ofclaim 12, wherein the substrate support member is configured to supporta substrate in an orientation such that a plating surface of thesubstrate is facing away from the substrate support member.
 14. Theelectroless processing system of claim 13, wherein the substrate supportmember comprises a vacuum chuck.
 15. The electroless processing systemof claim 13, wherein the substrate support member has an outer diameterthat is smaller than an outer diameter of the substrate being processed.16. The electroless processing system of claim 12, wherein the substratecentering member comprises a plurality of eccentric rotatable centeringposts positioned radially around a central axis of the substrate supportmember.
 17. The electroless processing system of claim 11, wherein theprocessing enclosure is detachably positioned in communication with theprocessing platform.
 18. The electroless processing system of claim 11,further comprising an access valve positioned in the processingenclosure, the access valve being configured to allow a processingplatform robot access into the processing enclosure.
 19. An electrolessprocessing system, comprising: a primary substrate transfer robotpositioned on a mainframe; and at least one electroless processingenclosure positioned on the mainframe, the electroless processingenclosure comprising a sealable enclosure defining a processing volumeand having at least one selectively actuated access door; a first fluidprocessing cell positioned on the processing volume and configured toapply at least one of an electroless activation solution and a cleaningsolution to a substrate; a second fluid processing cell positioned inthe processing volume and configured to apply an electroless platingsolution to the substrate; and a substrate shuttle positioned betweenthe first and second fluid processing cells in the processing volume,the shuttle being configured to transfer substrates between the firstand second fluid processing cells.
 20. The processing system of claim19, further comprising a gas delivery system in fluid communication withan interior volume of the enclosure.